Spin injection in a ferromagnet/resonant tunneling diode heterostructure

被引:0
作者
Jin Bao
机构
基金
高等学校博士学科点专项科研基金; 中国国家自然科学基金;
关键词
spin injection; resonant tunneling diode; heterostructure; spin polarization;
D O I
暂无
中图分类号
O482 [固体性质];
学科分类号
070205 ; 0805 ; 080502 ; 0809 ;
摘要
The spin transport property of a ferromagnet (FM)/insulator (Ⅰ)/resonant tunneling diode (RTD) heterostructure was stud-ied. The transmission coefficient and spin polarization in a multilayered heterostructure was calculated by a Schrdinger wave equa-tion. An Airy function formalism approach was used to solve this equation. Based on the transfer matrix approach,the transmittivity of the structure was determined as a function of the Feimi energy and other parameters. The result shows that the spin polarization induced by the structure oscillates with the increasing Fermi energy of the FM layer. While the thickness of the RTD is reduced,the resonant peaks become broad. In the heterostructure,the spin polarization reaches as high as 40% and can be easily controlled by the external bias voltage.
引用
收藏
页码:638 / 643
页数:6
相关论文
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