AlInGaAs/AlGaAs Strained Quantum Well Lasers Grown by Molecular Beam Epitaxy附视频

被引：1

作者：

杨国文

徐遵图

徐俊英

张敬明

肖建伟

陈良蕙

机构：

来源：

半导体学报 | 1997年 / 04期

关键词：

Ga; In; cm; AlInGaAs/AlGaAs Strained Quantum Well Lasers Grown by Molecular Beam Epitaxy;

D O I：

暂无

中图分类号：

TN24 [激光技术、微波激射技术];

学科分类号：

摘要：

AlInGaAs/AlGaAs strained single quantum well lasers with an emission wavelength of 810nm were fabricated by molecular beam epitaxy (MBE). The threshold current density is 375A/cm2 for broad-area lasers(100×800μm2), and it decreases to 270A/cm2 when the cavity length extends to 1600μm, which is the best result in quaternary AlInGaAs/AlGaAs strained quantum well lasers for the as-grown wafer by MBE. An external differential quantum efficiency of 1.1W/A(72%) and a narrow transverse beam divergence of 34° are obtained for the uncoated lasers.

引用

页码：313 / 316

页数：4

共 9 条

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