Effective passivation of black phosphorus transistor against ambient degradation by an ultra-thin tin oxide film

被引：0

作者：

Dianzhong Wu ^{[1
]}

Zhijian Peng ^{[1
]}

Chuanhong Jin ^{[2
]}

Zhiyong Zhang ^{[2
]}

机构：

[1] School of Engineering and Technology,China University of Geosciences

[2] Hunan Institute of Advanced Sensing and Information Technology,Xiangtan University

来源：

Science Bulletin | 2019年 / 64卷 / 09期

关键词：

BP; SnO; FET; Effective passivation of black phosphorus transistor against ambient degradation by an ultra-thin tin oxide film;

D O I：

暂无

中图分类号：

TN32 [半导体三极管（晶体管）]; TB383.2 [];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ; 070205 ; 1406 ;

摘要：

<正>Recently, two-dimensional (2D) layered semiconducting materials have been considered as promising channel materials to construct aggressively-scaled transistors owing to their excellent electrostatics and remained high carrier mobility even at atomic thickness [1,2]. Among all of the emerging 2D semiconductors,black phosphorus (BP) exhibits high comprehensive electrical

引用

页码：570 / 574

页数：5

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