Effective passivation of black phosphorus transistor against ambient degradation by an ultra-thin tin oxide film

被引：0
作者：
Dianzhong Wu
Zhijian Peng
Chuanhong Jin
Zhiyong Zhang
机构：
[1] School of Engineering and Technology,China University of Geosciences
[2] Hunan Institute of Advanced Sensing and Information Technology,Xiangtan University
来源：
ScienceBulletin | 2019年 / 64卷 / 09期
基金：
中国国家自然科学基金;
关键词：
BP; SnO; FET; Effective passivation of black phosphorus transistor against ambient degradation by an ultra-thin tin oxide film;
D O I：
暂无
中图分类号：
TN32 [半导体三极管（晶体管）]; TB383.2 [];
学科分类号：
070205 ; 0805 ; 080501 ; 080502 ; 080903 ; 1406 ;
摘要：
Recently, two-dimensional (2D) layered semiconducting materials have been considered as promising channel materials to construct aggressively-scaled transistors owing to their excellent electrostatics and remained high carrier mobility even at atomic thickness [1,2]. Among all of the emerging 2D semiconductors,black phosphorus (BP) exhibits high comprehensive electrical
引用
收藏
页码：570 / 574
页数：5
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