Transient Photoluminescence Studies of Tunneling in Asymmetric Double Quantum Wells

被引：0

作者：

黄旭光

蔡志岗

李庆行

余振新

王太宏

梅笑冰

杨国桢

机构：

[1] Academia Sinica

[2] Beijing 100080

[3] Guangzhou 510275

[4] Institute of Physics

[5] PRC

[6] State Key Laboratory of Ultrafast Laser Spectroscopy

[7] Zhongshan University

来源：

ChineseScienceBulletin | 1994年 / 03期

关键词：

asymmetric double quantum wells; tunneling process; transient photoluminescence;

D O I：

暂无

中图分类号：

O413.1 [量子力学（波动力学、矩阵力学）];

学科分类号：

070205 ; 0809 ;

摘要：

1 Introduction Carriers in semiconductor quantum wells and superlattices can move in both paral-lel and perpendicular directions to interfaces of layers. Carriers must penetrate poten-tial barriers in their perpendicular movement and therefore, this kind of transport iscalled the carrier tunneling. Since Esaki and Tsu’s initiative research in 1973, especiallyafter the quantum well and superlattice materials came into the world, the carrier tun-neling in semiconductor heterostructures has received comiderable attention: (i) In the

引用

页码：193 / 197

页数：5

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