S-band low noise amplifier using 1μm InGaAs/InAlAs/InP pHEMT附视频

被引：1

作者：

ZHamaizia ^{[1
]}

NSengouga ^{[1
]}

MCEYagoub ^{[2
]}

MMissous ^{[3
]}

机构：

[1] Laboratory of Materials Semiconductors and Metallic,University of Med Khider

[2] RF and Microwave Research Group,School of Electrical Engineering and Computer Science,University of Ottawa,Ottawa ON,KIN N Canada

[3] Microelectronic & Nanostructure Group,School of Electric and Electronic Engineering,University of Manchester,UK

来源：

半导体学报 | 2012年 / 02期

关键词：

HEMT; InGaAs; InP; SKADS; telescope; LNA;

D O I：

暂无

中图分类号：

TN386.6 [结型场效应晶体管]; TN722.3 [低噪声放大器];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ; 080902 ;

摘要：

<正>This paper discusses the design of a wideband low noise amplifier（LNA） in which specific architecture decisions were made in consideration of system-on-chip implementation for radio-astronomy applications.The LNA design is based on a novel ultra-low noise InGaAs/InAlAs/InP pHEMT.Linear and non-linear modelling of this pHEMT has been used to design an LNA operating from 2 to 4 GHz.A common-drain in cascade with a common source inductive degeneration,broadband LNA topology is proposed for wideband applications.The proposed configuration achieved a maximum gain of 27 dB and a noise figure of 0.3 dB with a good input and output return loss(S11<—10 dB,S22<—11 dB).This LNA exhibits an input 1-dB compression point of-18 dBm,a third order input intercept point of 0 dBm and consumes 85 mW of power from a 1.8 V supply.

引用

页码：58 / 63

页数：6

共 3 条

[1]

Design of a wideband low noise amplifier for radio-astronomy applications[J] . Z Hamaizia,N Sengouga,M Missous,M C E Yagoub.Journal of Instrumentation . 2010 (04)

[2]

Very low leakage InGaAs/InAlAs pHEMTs for broadband (300MHz to 2GHz) low-noise applications[J] . A. Bouloukou,B. Boudjelida,A. Sobih,S. Boulay,J. Sly,M. Missous.Materials Science in Semiconductor Processing . 2008 (5)

[3]

Modelling and simulation of low-frequency broadband LNA using InGaAs/InAlAs structures: A new approach[J] . B. Boudjelida,A. Sobih,A. Bouloukou,S. Boulay,S. Arshad,J. Sly,M. Missous.Materials Science in Semiconductor Processing . 2008 (5)

← 1 →