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Power Semiconductor Devices-an Enabling Technology for Future High Efficient and High Power Density Power Conversion Systems
被引：0
|作者：
LORENZLeo
机构：
[1] ECPE/InfineonTechnologiesGermany
来源：
关键词：
low voltage power MOSFET;
super junction devices;
wide band gap switches;
D O I：
暂无
中图分类号：
TN303 [结构、器件];
学科分类号：
摘要：
<正>Power semiconductor devices are the key technology driver for all power electronic system engineering.The main development trend for power devices is going towards higher power handling capability at even smaller Sivolume, faster switching performance,advanced ruggedness and reliability at elevated operating temperature and extended SOA diagrams.To cover all applications in the various fields of industry,consumer,computing and automotive the device optimization is different for low voltage power MOSFET,for high voltage MOSFET,for plasma modulated devices and components based on wide bandgap(WB) material.In the paper,the main development trends will be described and discussed.
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页码：2 / 7
页数：6
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