1064 nm InGaAsP multi-junction laser power converters

被引：0

作者：

Jiajing Yin ^{[1
,2
]}

Yurun Sun ^{[1
]}

Shuzhen Yu ^{[1
]}

Yongming Zhao ^{[1
]}

Rongwei Li ^{[1
]}

Jianrong Dong ^{[1
]}

机构：

[1] Key Laboratory of Nano Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences

[2] Nano Science and Technology Institute, University of Science and Technology of China

来源：

Journal of Semiconductors | 2020年 / 06期

基金：

中国国家自然科学基金;

关键词：

InGaAsP; multi-junction laser power converter; conversion efficiency;

D O I：

暂无

中图分类号：

TN24 [激光技术、微波激射技术];

学科分类号：

0803 ; 080401 ; 080901 ;

摘要：

Laser photovoltaic devices converting 1064 nm light energy into electric energy present a promising prospect in wireless energy transmission due to the commercial availability of high power 1064 nm lasers with very small divergence. Besides their high conversion efficiency, a high output voltage is also expected in a laser energy transmission system. Meanwhile,1064 nm InGaAsP multi-junction laser power converters have been developed using p;-InGaAs/n;-InGaAs tunnel junctions to connect sub-cells in series to obtain a high output voltage. The triple-junction laser power converter structures are grown on p-type InP substrates by metal-organic chemical vapor deposition（MOCVD）, and InGaAsP laser power converters are fabricated by conventional photovoltaic device processing. The room-temperature I–V measurements show that the 1 × 1 cm;triplejunction InGaAsP laser power converters demonstrate a conversion efficiency of 32.6% at a power density of 1.1 W/cm;, with an open-circuit voltage of 2.16 V and a fill factor of 0.74. In this paper, the characteristics of the laser power converters are analyzed and ways to improve the conversion efficiency are discussed.

引用

页码：43 / 47

页数：5

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