Effect of Annealing on Ferroelectric Properties of Bi (3.25)La0.75Ti3O (12) Thin Films Prepared by the Sol-gel Method

被引：0
|
作者：
郭冬云 [1 ]
机构：
[1] Department of Electronic Science and Technology Huazhong University of Science and Technology Wuhan 430074 China
来源：
Journal of Wuhan University of Technology-Materials Science | 2005年 / 04期
关键词：
Bi; 3.25La; 0.75Ti3O; 12; ferroelectric thin film; sol-gel method; leakage current;
D O I：
暂无
中图分类号：
TG156.2 [退火];
学科分类号：
080201 ; 080503 ;
摘要：
Bi 3.25La 0.75Ti3O 12 （BLT） thin films were prepared on Pt/Ti/SiO2/Si substrate by the sol-gel method. The effect of annealing on their structures and ferroelectric properties was investigated. The XRD patterns indicate that the BLT films annealed at different temperatures are randomly orientated and the single perovskite phase is obtained at 550 ℃. The remnant polarization increases and the coercive field decreases with the annealing temperature increasing. The leakage current density of the BLT films annealed at 700 ℃ is about 5.8×10 -8 A/cm2 at the electric field of 250 kV/cm.
引用
收藏
页码：20 / 21
页数：2
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