Calculations of two dimensional electron gas distributions in AlGaN/GaN material system

被引：0

作者：

郭宝增 ^{[1
]}

宫娜 ^{[1
]}

于富强 ^{[2
]}

机构：

[1] College of Electronic and Informational Engineering, Hebei University

[2] College of Physics, Hebei Normal University

来源：

Chinese Physics B | 2008年 / 17卷 / 01期

关键词：

GaN; heterojunction; exchange–correlation potential; two-dimensional electron gas;

D O I：

暂无

中图分类号：

TN304 [材料];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

This paper presents calculating results of the two-dimensional electron gas (2DEG) distributions in AlGaN/GaN material system by solving the Schro¨dinger and Poisson equations self-consistently. Due to high 2DEG density in the AlGaN/GaN heterojunction interface, the exchange correlation potential should be considered among the potential energy item of Schro¨dinger equation. Analysis of the exchange correlation potential is given. The dependencies of the conduction band edge, 2DEG density on the Al mole fraction are presented. The polarization fields have strong influence on 2DEG density in the AlGaN/GaN heterojunction, so the dependency of the conduction band edge on the polarization is also given.

引用

页码：290 / 295

页数：6

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