High energy electron radiation effect on Ni and Ti/4H-SiC Schottky barrier diodes at room temperature

<正>This paper reports that Ni and Ti/4H-SiC Schottky barrier diodes（SBDs） were fabricated and irradiated with 1 MeV electrons up to a dose of 3.43×1014 e/cm2.After radiation,the Schottky barrier heightφb of the Ni/4H-SiC SBD increased from 1.20 eV to 1.21 eV,but decreased from 0.95 eV to 0.94 eV for the Ti/4H-SiC SBD.The degradation ofφB could be explained by interface states of changed Schottky contacts.The on-state resistance RS of both diodes increased with the dose,which can be ascribed to the radiation defects.The reverse current of the Ni/4H-SiC SBD slightly increased,but for the Ti/4H-SiC SBD it basically remained the same.At room temperature,φB of the diodes recovered completely after one week,and the RS partly recovered.