POLYMETHYLMETHACRYLATE LANGMUIR-BLODGETT FILMS FOR HIGH RESOLUTION ELECTRON BEAM RESIST

被引：0
|
作者：
鲁武
顾宁
韦钰
沈浩瀛
张岚
机构：
[1] Nanjing 210016
[2] Southeast University
[3] Nanjing 210018
[4] Nanjing Electronic Devices Institute
来源：
JournalofElectronics(China) | 1994年 / 03期
关键词：
Langmuir-Blodgett film; Electron beam lithography; Resist;
D O I：
暂无
中图分类号：
TN16 [电子光学仪器];
学科分类号：
0803 ; 080401 ;
摘要：
Ultra-thin (20-100nm) polymethylmethacrylate(PMMA) films prepared by Langmuir-Blodgett techniques have been explored as high resolution electron beam resists. A Hitachi S-450 Scanning Electron Microscope (SEM) has been refitted for a high resolution electron beam exposure system. The lithographic properties and exposure conditions of LB PMMA films were investigated. 0.15μm lines-and-spaces patterns were achieved by using the SEM as the exposure tool. The results demonstrate that the etch resistance of such films is sufficiently good to allow patterning of a 20 nm aluminum film suitable for mask fabrication.
引用
收藏
页码：247 / 252
页数：6
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