Approaching the minimum lattice thermal conductivity of p-type SnTe thermoelectric materials by Sb and Mg alloying

被引:1
作者
Tiezheng Fu [1 ]
Jiazhan Xin [1 ]
Tiejun Zhu [1 ]
Jiajun Shen [1 ]
Teng Fang [1 ]
Xinbing Zhao [1 ]
机构
[1] State Key Laboratory of Silicon Materials,and School of Materials Science and Engineering,Zhejiang University
基金
中国国家自然科学基金;
关键词
Tin telluride; Thermoelectric materials; Point defect scattering; Band convergence;
D O I
暂无
中图分类号
TB34 [功能材料];
学科分类号
080501 ;
摘要
SnTe,as the nontoxic analogue to high-performance PbTe thermoelectric material,has captured the worldwide interest recently.Many triumphant instances focus on the strategies of band convergence,resonant doping,and nano-precipitates phonon scattering.Herein,the p-type SnTe-based materials SnSbMgTe(x=0–0.10)are fabricated and a combined effect of Sb and Mg is investigated.Sb alloying tunes the hole carrier concentration of SnTe and decreases the lattice thermal conductivity.Mg alloying leads to a nearly hundredfold rise of disorder parameter due to the large mass and strain fluctuations,and as a consequence the lattice thermal conductivity decreases further down to$0.64 W mKat 773 K,close to the theoretical minimum of the lattice thermal conductivity($0.50 W mK)of SnTe.In conjunction with the enhancement of the Seebeck coefficient caused by band convergence due to Mg alloying,the maximum zTreaches$1.02 and the device zTof$0.50 at 773 K for SnSbMgTe,suggesting this SnTe-based composition has a promising potential in intermediate temperature thermoelectric applications.
引用
收藏
页码:1024 / 1030
页数:7
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