High quantum efficiency long-/long-wave dual-color type-Ⅱ InAs/GaSb infrared detector

被引：5

作者：

蒋志 ^{[1
,2
]}

孙姚耀 ^{[1
,2
]}

郭春妍 ^{[1
,2
]}

吕粤希 ^{[1
,2
]}

郝宏玥 ^{[1
,2
]}

蒋洞微 ^{[1
,2
]}

王国伟 ^{[1
,2
]}

徐应强 ^{[1
,2
]}

牛智川 ^{[1
,2
]}

机构：

[1] State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences

[2] Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences

来源：

Chinese Physics B | 2019年 / 28卷 / 03期

基金：

国科技部“十一五”科技计划项目;

关键词：

infrared detector; InAs/GaSb superlattice; dual-color; molecular beam epitaxy;

D O I：

暂无

中图分类号：

TN215 [红外探测、红外探测器];

学科分类号：

0803 ; 080401 ; 080901 ;

摘要：

A long-/long-wave dual-color detector with N-M-π-B-π-M-N structure was developed based on a type-Ⅱ InAs/GaSb superlattice. The saturated responsivity was achieved under low bias voltage for both channels. The device could be operated as a single detector for sequential detection and showed high quantum efficiencies. The peak quantum efficiencies of long-wavelength infrared band-1（blue channel） and long-wavelength infrared band-2（red channel） were 44% at 6.3 μm under 20 mV and 57% at 9.1 μm under-60 mV, respectively. The optical performance for each channel was achieved using a 2 μm thickness absorber. Due to the high QE, the specific detectivities of the blue and red channels reached5.0×10;cm·Hz;/W at 6.8 μm and 3.1×10;cm·Hz1;/W at 9.1 μm, respectively, at 77 K.

引用

页码：386 / 390

页数：5