Double-balanced mixer based on monolayer graphene fieldeffect transistors

被引：0
作者：
Min Wu [1 ]
Weida Hong [2 ]
Guanyu Liu [2 ]
Jiejun Zhang [2 ]
Ziao Tian [2 ]
Miao Zhang [2 ]
机构：
[1] School of Microelectronics, University of Science and Technology of China
[2] Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
来源：
Journal of Semiconductors | 2022年 / 05期
基金：
中国国家自然科学基金;
关键词：
D O I：
暂无
中图分类号：
TN386 [场效应器件];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
Graphene field-effect transistors(GFET) have attracted much attention in the radio frequency(RF) and microwave fields because of its extremely high carrier mobility. In this paper, a GFET with a gate length of 5 μm is fabricated through the van der Walls(vdW) transfer process, and then the existing large-signal GFET model is described, and the model is implemented in Verilog-A for analysis in RF and microwave circuits. Next a double-balanced mixer based on four GFETs is designed and analyzed in advanced design system(ADS) tools. Finally, the simulation results show that with the input of 300 and 280 MHz,the IIP3 of the mixed signal is 24.5 dBm.
引用
收藏
页码：83 / 87
页数：5
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