Characterization of the heteroepitaxial growth of 3C-SiC on Si during low pressure chemical vapor deposition

被引：0

作者：

CHEN Da

机构：

来源：

Science Bulletin | 2010年 / Z2期

基金：

中国国家自然科学基金;

关键词：

3C-SiC; low pressure chemical vapor deposition; X-ray diffraction; atomic force microscopy; Fourier transform infrared spectroscopy;

D O I：

暂无

中图分类号：

O484.1 [薄膜的生长、结构和外延];

学科分类号：

080501 ; 1406 ;

摘要：

3C-SiC heteroepitaxial layers were grown on Si substrates using a horizontal,hot-wall low pressure chemical vapor deposition system.The crystal quality,surface morphology and thickness uniformity of the layers were characterized by X-ray diffraction,atomic force microcopy and Fourier transform infrared spectroscopy,respectively.Growth of the epitaxial layer was determined to follow a three-dimensional island mode initially and then switch to a step-flow mode as the growth time increases.

引用

页码：3102 / 3106

页数：5

共 5 条

[1] N型4H-SiC同质外延生长 [J].

贾仁需 ;

张义门 ;

张玉明 ;

王悦湖 .

物理学报, 2008, (10) :6649-6653

[2]

Improved empirical DC I-V model for 4H-SiC MESFETs[J]. CAO QuanJun,ZHANG YiMen,ZHANG YuMing,LV HongLiang,WANG YueHu,TANG XiaoYan & GUO HuiKey Lab of Education Ministry for Wide Band-Gap Semiconductor Materials and Devices,Microelectronics Institute of Xidian University,Xi’an 710071,China.Science in China(Series F:Information Sciences). 2008(08)

[3]

Highly sensitive determination of N + doping level in 3C–SiC and GaN epilayers by Fourier transform infrared spectroscopy[J] . M. Portail,M. Zielinski,T. Chassagne,H. Chauveau,S. Roy,P. De Mierry.Materials Science & Engineering B . 2009 (1)

[4]

XPS and XRD study of crystalline 3C-SiC grown by sublimation method[J] . R.J Iwanowski,K Fronc,W Paszkowicz,M Heinonen.Journal of Alloys and Compounds . 1999 (1)

[5]

Raman studies of Ge-promo- ted stress modulation in 3C-SiC grown on Si (111) .2 Zgheib C,McNeil L E,Kazan M,et al. Appl Phys Lett . 2005

← 1 →