Physical mechanism of performance adjustment in selective buried oxide n-MOSFETs

被引：0

作者：

Qin HUANG ^{[1
]}

Renhua LIU ^{[1
]}

Yabin SUN ^{[1
]}

Xiaojin LI ^{[1
]}

Yanling SHI ^{[1
]}

Changfeng WANG ^{[2
]}

DuANDuan LIAO ^{[2
]}

Ming TIAN ^{[2
]}

机构：

[1] Key Laboratory of Multidimensional Information Processing, Department of Electrical Engineering,East China Normal University

来源：

ScienceChina(InformationSciences) | 2019年 / 62卷 / 06期

基金：

中国国家自然科学基金;

关键词：

MOS; SOI; Physical mechanism of performance adjustment in selective buried oxide n-MOSFETs;

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

Dear editor,FDSOI MOSFETs do not rely on channel doping to control short channel effects; they overcome the barriers of conventional bulk MOSFETs by means of scaling. Owing to the presence of the buried oxide insulator (BOX), FDSOI MOSFETs offer many additional benefits over bulk MOSFETs. Some important advantages being:(i) total

引用

页码：186 / 188

页数：3