HIGHTEMPERATUREESRPROPERTIESOFP,B-DOPEDa-Si1-xCx:HFILMS

被引：0

作者：

张仿清

陈光华

程金龙

机构：

[1] Department of Physics

[2] Lanzhou University

[3] Analytical Testing Center

来源：

ScienceBulletin | 1988年 / 21期

关键词：

dangling bond; amorphous semiconductor; localized electron; band tail state;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

<正> Ⅰ. INTRODUCTION Hydrogenated amorphous silicon-carbon (a-Si1-xCx:H) film is an important amorphous photoelectric semiconductor material having a wide and variable band gap. It reduces the interface reflection and surface absorption of incident light when it is

引用

页码：1767 / 1771

页数：5