RF CMOS modeling:a scalable model of RF-MOSFET with different numbers of fingers附视频

被引：0
作者：
余裕宁
孙玲玲
刘军
机构：
[1] KeyLaboratoryofRFCircuitsandSystemsofMinistryofEducation,HangzhouDianziUniversity
来源：
半导体学报 | 2010年 / 11期
关键词：
RF-MOSFETs; scalable model; parasitic components; layout-based;
D O I：
暂无
中图分类号：
TN386 [场效应器件];
学科分类号：
摘要：
<正>A novel scalable model for multi-finger RF MOSFETs modeling is presented.All the parasitic components, including gate resistance,substrate resistance and wiring capacitance,are directly determined from the layout.This model is further verified using a standard 0.13μm RF CMOS process with nMOSFETs of different numbers of gate fingers,with the per gate width fixed at 2.5μm and the gate length at 0.13μm.Excellent agreement between measured and simulated S-parameters from 100 MHz to 20 GHz demonstrate the validity of this model.
引用
收藏
页码：33 / 37
页数：5
相关论文
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