Effect of annealing temperature on multiferroic properties of BiNdFeOthin films prepared by sol-gel method

被引:0
作者
GOTO Takashi
机构
[1] InstituteforMaterialsResearch,TohokuUniversity,Sendai-,Japan
关键词
Bi0.85Nd0.15FeO3 thin films; sol-gel method; annealing temperature; ferroelectric properties; ferromagnetic properties;
D O I
暂无
中图分类号
TG156.2 [退火];
学科分类号
080201 ; 080503 ;
摘要
Bi0.85Nd0.15FeO3 films were prepared on Pt/Ti/SiO2/Si substrate by a sol-gel method,and annealed at different temperatures.The effect of annealing temperature on the crystal structure,dielectric,ferroelectric,and ferromagnetic properties was investigated.When the Bi0.85Nd0.15FeO3 films were annealed at 490-600°C,the single phase was obtained.Bi0.85Nd0.15FeO3 film annealed at 600°C showed good multiferroic properties with εr of 145 (at 1 MHz),Ms of 44.8 emu/cm3,and 2Pr of 16.6 μC/cm2.
引用
收藏
页码:1572 / 1575
页数:4
相关论文
共 17 条
[1]  
Epitaxial BiFeO3 multiferroic thin film heterostructures. Wang J, Neaton J B,Zheng H, et al. Science . 2003
[2]  
Magnetoelectricity at room temperature in the Bi0.9-xTbxLa0.1FeO3 system. V. R. Palkar,D. C. Kundaliya,S. K. Malik,S. Bhattacharya. Physical Review B Condensed Matter and Materials Physics . 2004
[3]  
Structural and dielectric properties of Ga-modified BiFeO3-PbTiO3 crystalline solutions. Cheng,J. R.,Li,N.,Eric Cross,L. Journal of Applied Physics . 2003
[4]  
Metalorganic chemical vapor deposition of lead-free ferroelectric BiFeO3 films for memory applications. Yang S. Y,Zavaliche F,Mohaddes-Ardabili L. Applied Physics Letters . 2005
[5]  
Multiferroic properties of single-phase Bi 0.85 La 0.15 FeO 3 lead-free ceramics. Yuan, G.L,Baba-Kishi, K.Z,Liu, J.-M,Or, Siu Wing,Wang, Y.P,Liu, Z.G. Journal of the American Ceramic Society . 2006
[6]  
Effects of Gd substitution on structure and ferroelectric properties of BiFeO3 thin films prepared using metal organic decomposition. G. D. Hu,X. Cheng,W. B. Wu et al. Applied Physics . 2007
[7]  
Effect of Nd dopant on magnetic and electric properties of BiFeO3 thin films prepared by metalorganic deposition method. Fengzhen Huang,Xiaomei Lu,Weiwei Lin et al. Applied Physics . 2006
[8]  
Effectof La substitution on structural and electrical properties ofBiFeO3thin film. Das S R,Bhattacharya P,Choudhary R NP,et al. Journal of Applied Physics . 2006
[9]  
Effect of Ho content on microstructure and ferroelectric properties of Bi4-xHoxTi3O12 thin films prepared by sol-gel method. Guo D,Zhang L,Li M,et al. Journal of the American Ceramic Society . 2008
[10]  
Enhanced ferroelectric properties of Cr-doped BiFeO3 thin films grown by chemical solution deposition. J. K. Kim,S. S. Kim,W. J. Kim. Applied Physics Letters . 2006