Research progress of self-organized Ge quantum dots on Si substrate

被引：0
|
作者：
HUANG Changjun
机构：
来源：
Progress in Natural Science | 2004年 / 05期
基金：
国家高技术研究发展计划(863计划); 中国国家自然科学基金;
关键词：
quantum dots; Si-based optoelectronics; SiGe material;
D O I：
暂无
中图分类号：
O431 [光本性的理论];
学科分类号：
070207 ; 0803 ;
摘要：
A review is presented on recent research development of self-organized Ge/Si quantum dots (QDs). Emphasis is put on the morphological evolution of the Ge quantum dots grown on Si (001) substrate, the structure analysis of multilayer Ge QDs, the optical and electronic properties of these nanostructures, and the approaches to fabricating ordered Ge quantum dots.
引用
收藏
页码：14 / 21
页数：8
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