Influence of varied doping structure on photoemissive property of photocathode

被引：0

作者：

牛军 ^{[1
,2
]}

张益军 ^{[1
]}

常本康 ^{[1
]}

熊雅娟 ^{[1
]}

机构：

[1] School of Electronic Engineering and Optoelectronic Technology,Nanjing University of Science and Technology

[2] Department of Electron and Electric Engineering,Nanyang Institute of Technology

来源：

Chinese Physics B | 2011年 / 04期

基金：

中国国家自然科学基金;

关键词：

varied doping; photocathode; energy distribution; quantum efficiency;

D O I：

暂无

中图分类号：

O462 [阴极电子学];

学科分类号：

0809 ; 080901 ;

摘要：

The built-in electric fields within a varied doping GaAs photocathode may promote the transport of electrons from the bulk to the surface,thus the quantum efficiency of the cathode can be enhanced remarkably. But this enhancement,which might be due to the increase in either the number or the energy of electrons reaching the surface,is not clear at present. In this paper,the energy distributions of electrons in a varied doping photocathode and uniform doping photocathode before and after escaping from the cathode surface are analysed,and the number of electrons escaping from the surface in different cases is calculated for the two kinds of photocathodes. The results indicate that the varied doping structure can not only increase the number of electrons reaching the surface but also cause an offset of the electron energy distribution to high energy. That is the root reason for the enhancement of the quantum efficiency of a varied doping GaAs photocathode.

引用

页码：360 / 365

页数：6