A dual-band reconfigurable direct-conversion receiver RF front-end

被引：0
|
作者：
姚国钦 [1 ]
池保勇 [1 ]
张春 [1 ]
王志华 [1 ]
机构：
[1] Institute of Microelectronics,Tsinghua University
来源：
半导体学报 | 2009年 / 30卷 / 09期
基金：
中国国家自然科学基金;
关键词：
RF; CMOS; reconfigurable receiver; direct-conversion; switchable inductor;
D O I：
暂无
中图分类号：
TN851 [接收机：按形式分];
学科分类号：
摘要：
A dual-band reconfigurable wireless receiver RF front-end is presented,which is based on the directconversion principle and consists of a low noise amplifier (LNA) and a down-converter.By utilizing a compact switchable on-chip symmetrical inductor,the RF front-end could be switched between two operation frequency bands without extra die area cost.This RF front-end has been implemented in the 180 nm CMOS process and the measured results show that the front-end could provide a gain of 25 dB and IIP3 of 6 dBm at 2.2 GHz,and a gain of 18.8 dB and IIP3 of 7.3 dBm at 4.5 GHz.The whole front-end consumes 12 mA current at 1.2 V voltage supply for the LNA and 2.1 mA current at 1.8 V for the mixer,with a die area of 1.2×1 mm2.
引用
收藏
页码：91 / 95
页数：5
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