3D resistive RAM cell design for high-density storage class memory—a review

被引：0

作者：

Boris HUDEC ^{[1
]}

ChungWei HSU ^{[1
]}

ITing WANG ^{[1
]}

WeiLi LAI ^{[1
]}

CheChia CHANG ^{[1
]}

Taifang WANG ^{[1
]}

Karol FRHLICH ^{[2
]}

ChiaHua HO ^{[3
]}

ChenHsi LIN ^{[3
]}

TuoHung HOU ^{[1
]}

机构：

[1] Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University

[2] Institute of Electrical Engineering, Slovak Academy of Sciences

[3] Winbond Electronics Corporation

来源：

ScienceChina(InformationSciences) | 2016年 / 59卷 / 06期

关键词：

RRAM; ReRAM; resistive switching; crossbar; cross-point; storage class memory; 3D integration; atomic layer deposition; selector;

D O I：

暂无

中图分类号：

TP333 [存贮器];

学科分类号：

081201 ;

摘要：

In this article, we comprehensively review recent progress in the Re RAM cell technology for 3D integration focusing on a material/device level. First we briefly mention pioneering work on high-density crossbar Re RAM arrays which paved the way to 3D integration. We discuss the two main proposed 3D integration schemes—3D horizontally stacked Re RAM vs 3D Vertical Re RAM and their respective advantages and disadvantages. We follow with the detailed memory cell design on important work in both areas, utilizing either filamentary or interface-limited switching mechanisms. We also discuss our own contributions on Hf O2-based filamentary 3D Vertical Re RAM as well as Ta Ox/Ti O2 bilayer-based self-rectifying 3D Vertical Re RAM. Finally,we summarize the present status and provide an outlook for the nearterm future.

引用

页码：35 / 55

页数：21

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