Molecular-beam epitaxy of topological insulator Bi2Se3(111) and (221) thin films

被引：0
作者：
谢茂海 [1 ]
郭欣 [1 ]
徐忠杰 [1 ]
何永健 [1 ]
机构：
[1] Physics Department,The University of Hong Kong
来源：
Chinese Physics B | 2013年 / 22卷 / 06期
关键词：
topological insulator; molecular-beam epitaxy; Bi2Se3; twin domain; strain;
D O I：
暂无
中图分类号：
TM21 [绝缘材料、电介质及其制品];
学科分类号：
0805 ; 080502 ; 080801 ;
摘要：
This paper presents an overview of the growth of Bi2Se3,a prototypical three-dimensional topological insulator,by molecular-beam epitaxy on various substrates.Comparison is made between the growth of Bi2Se3(111) on van der Waals(vdW) and non-vdW substrates,with attention paid to twin suppression and strain.Growth along the [221] direction of Bi2Se3 on InP(001) and GaAs(001) substrates is also discussed.
引用
收藏
页码：95 / 102
页数：8
相关论文
共 50 条
  • [41] Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface
    Bansal, Namrata
    Kim, Yong Seung
    Edrey, Eliav
    Brahlek, Matthew
    Horibe, Yoichi
    IidaD, Keiko
    Tanimura, Makoto
    Li, Guo-Hong
    Feng, Tian
    Lee, Hang-Dong
    Gustafsson, Torgny
    Andrei, Eva Y.
    Oh, Seongshik
    THIN SOLID FILMS, 2011, 520 (01) : 224 - 229
  • [42] Sensitive biosensors based on topological insulator Bi2Se3 and peptide
    Jiang, Yujiu
    Zhu, Peng
    Zhao, Jinge
    Li, Shanshan
    Wu, Yetong
    Xiong, Xiaolu
    Zhang, Xu
    Liu, Yuxiang
    Bai, Jiangyue
    Wang, Zihang
    Xu, Shiqi
    Wang, Minxuan
    Song, Tinglu
    Wang, Zhiwei
    Wang, Weizhi
    Han, Junfeng
    ANALYTICA CHIMICA ACTA, 2023, 1239
  • [43] An Efficient Dopant for Introducing Magnetism into Topological Insulator Bi2Se3
    Wang, Dan
    Hu, Cui-E
    Liu, Li-Gang
    Zhang, Min
    Chen, Xiang-Rong
    MATERIALS, 2022, 15 (11)
  • [44] Observation of chiral surface excitons in a topological insulator Bi2Se3
    Kung, H-H.
    Goyal, A. P.
    Maslov, D. L.
    Wang, X.
    Lee, A.
    Kemper, A. F.
    Cheong, S-W.
    Blumberg, G.
    PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2019, 116 (10) : 4006 - 4011
  • [45] Study on the electrochemical catalytic properties of the topological insulator Bi2Se3
    Chen, Shan
    Fang, Yi-Min
    Li, Juan
    Sun, Jian-Jun
    Chen, Guo-Nan
    Yang, Huang-Hao
    BIOSENSORS & BIOELECTRONICS, 2013, 46 : 171 - 174
  • [46] Determination of the actual valence band of a topological insulator Bi2Se3
    Higuchi, Yuki
    Itaya, Ryota
    Saito, Harutaka
    Toichi, Yuichiro
    Kobayashi, Takahiro
    Tomita, Mito
    Terakawa, Shigemi
    Suzuki, Katsuhiro
    Kuroda, Kenta
    Kotani, Takao
    Matsui, Fumihiko
    Suga, Shigemasa
    Sato, Hitoshi
    Sato, Kazunori
    Sakamoto, Kazuyuki
    VACUUM, 2025, 233
  • [47] Magnetotransport in Thin Epitaxial Bi2Se3 Films
    Oveshnikov, L. N.
    Prudkoglyad, V. A.
    Nekhaeva, E. I.
    Kuntsevich, A. Yu.
    Selivanov, Yu. G.
    Chizhevskii, E. G.
    Aronzon, B. A.
    JETP LETTERS, 2016, 104 (09) : 629 - 634
  • [48] Bi-rich grow topological insulator Bi2Se3 nanodomains structures
    Jia, Guozhi
    Wang, Xionglong
    Li, Qiang
    Yao, Jianghong
    SUPERLATTICES AND MICROSTRUCTURES, 2014, 66 : 33 - 38
  • [49] Electrical transport properties and morphology of topological insulator Bi2Se3 thin films with different thickness prepared by magnetron sputtering
    Zhang, Min
    Wei, Zhantao
    Jin, Rong
    Ji, Yaxin
    Yan, Yong
    Pu, Xiaoyan
    Yang, Xinsheng
    Zhao, Yong
    THIN SOLID FILMS, 2016, 603 : 289 - 293
  • [50] Topography and structure of ultrathin topological insulator Sb2Te3 films on Si(111) grown by means of molecular beam epitaxy
    Lanius, M.
    Kampmeier, J.
    Kolling, S.
    Mussler, G.
    Koenraad, P. M.
    Gruetzmacher, D.
    JOURNAL OF CRYSTAL GROWTH, 2016, 453 : 158 - 162
12345