Molecular-beam epitaxy of topological insulator Bi2Se3(111) and (221) thin films

被引：0
作者：
谢茂海 [1 ]
郭欣 [1 ]
徐忠杰 [1 ]
何永健 [1 ]
机构：
[1] Physics Department,The University of Hong Kong
来源：
Chinese Physics B | 2013年 / 22卷 / 06期
关键词：
topological insulator; molecular-beam epitaxy; Bi2Se3; twin domain; strain;
D O I：
暂无
中图分类号：
TM21 [绝缘材料、电介质及其制品];
学科分类号：
0805 ; 080502 ; 080801 ;
摘要：
This paper presents an overview of the growth of Bi2Se3,a prototypical three-dimensional topological insulator,by molecular-beam epitaxy on various substrates.Comparison is made between the growth of Bi2Se3(111) on van der Waals(vdW) and non-vdW substrates,with attention paid to twin suppression and strain.Growth along the [221] direction of Bi2Se3 on InP(001) and GaAs(001) substrates is also discussed.
引用
收藏
页码：95 / 102
页数：8
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