Effects of ion bombardment on microcrystalline silicon growth by inductively coupled plasma assistant magnetron sputtering

被引：0

作者：

HE YangYang 1

2 Key Laboratory of Materials Modification by Laser

机构：

来源：

Science China(Physics,Mechanics & Astronomy) | 2012年 / Mechanics & Astronomy)2012卷 / 11期

基金：

中央高校基本科研业务费专项资金资助; 中国国家自然科学基金;

关键词：

hydrogenated microcrystalline silicon; ion bombardment; magnetron sputtering; silicon-hydrogen bonding configuration;

D O I：

暂无

中图分类号：

O539 [等离子体物理的应用]; TN304.12 [];

学科分类号：

070204 ; 0805 ; 080501 ; 080502 ; 080903 ;

摘要：

Hydrogenated microcrystalline silicon(c-Si:H) thin films were deposited by inductively coupled plasma assistant magnetron sputtering(ICP-MS) in an Ar-H 2 gas mixture.The role of ion bombardment in the growth of c-Si:H films was studied with increasing negative bias voltages on the substrate holder from 0 to 100 V.Raman scattering,X-ray diffraction(XRD),Fourier transform infrared(FTIR) spectroscopy and transmission electron microscopy(TEM) were performed to investigate the microstructure changes of deposited Si films.Raman scattering showed that the high energy ion bombardment resulted in crystalline degradation of Si films.The XRD results showed the decrease and even elimination of preferential growth orientation of crystalline Si films with ion bombardment energy increase.The SiH bonding configuration changes and the increase of bonded hydrogen concentration were determined with the analysis of FTIR spectra.Furthermore,the dramatic evolution of cross-sectional morphology of Si thin films was detected by TEM observation.

引用

页码：2070 / 2075

页数：6

共 12 条

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