Solid-phase Crystallization of Hydrogenated Amorphous Silicon on Glass Substrates

被引：1

作者：

JIN Rui-min

机构：

来源：

Semiconductor Photonics and Technology | 2006年 / 01期

关键词：

PECVD; A-Si: H film; Furnace annealing; Rapid thermal annealing; Grain size;

D O I：

暂无

中图分类号：

TN304 [材料];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

Amorphous silicon films prepared by PECVD on glass substrate have been crystallized by conventional furnace annealing and rapid thermal annealing(RTA), respectively. From the Raman spectra, X-ray diffraction and scanning electron microscope, it is found that the grain size is crystallized at 850℃ in both techniques. The thin film made by RTA is smooth and of perfect structure, the thin film annealed by FA has a highly structural disorder. An average grain size of about 30nm is obtained by both techniques.

引用

页码：15 / 17 +29

页数：4

共 12 条

[1]

Influence of interface and Al structure on layer exchange during aluminum-induced crystallization of amorphous silicon. Nast O,hart mann A J. Journal of Applied Physiology . 2000

[2]

Preparation of thin fil m poly-stalline silicon on glass by photo thermal annealing. Jia Song,Ge Huichun,Geng Xinhua,et al. Solar Energy Materials . 2000

[3]

Poly-Si thin fil ms on glass substrates. Malinovska D D,Angelov O,Sendova M,et al. Thin Solid Fil ms . 2004

[4]

Residual-stress relaxationin poly-silicon thin fil ms by high-temperature rapid thermal annealing. Zhang Xin,Zhang Tong-Yi,Wong Man,et al. Sensors and Actuators . 1998

[5]

Solid-phase crystallization of amorphous silicon fil ms by rapid thermal annealing. JIN Rui-min,LU Jing-xiao,LI Rui,et al. Semiconductor Photonics and Technology . 2005

[6]

Comparison of properties of solid phase epitaxial silicon on sapphire fil m recrystallized by rapid thermal annealing and furnace annealing. Wang Qiyuan,Zan Yude,Wu Jianhua,et al. Journal of Materials Science . 2005

[7]

Thin-fil msilicon solar cell technology. Shah A V,Schade H,Vanecek M,et al. Progress in Photovoltaics : Research and Applications . 2004

[8]

Thin fil m solar cells : An overview. Chopra K L,Paulson P D,Dutta V. Progress in Photovoltaics : Research and Applications . 2004

[9]

Growth mechanismof microcrystalline silicon at high pressure condition. Rath J K,Franken R HJ,Gordijn A,et al. Journal of Non crystalline Solids . 2004

[10]

Poly-Si thin-fil mtransistors fabricated with rapid thermal-annealed silicon- fil m. Bonnel M,Duhumel N,Guendouz M,el al. Jpn.J . Appl . Phys . 1991

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