Study on characteristics of a double-conductible channel organic thin-film transistor with an ultra-thin hole-blocking layer

被引：0

作者：

袁广才 ^{[1
,2
]}

徐征 ^{[1
,2
]}

赵谡玲 ^{[1
,2
]}

张福俊 ^{[1
,2
]}

许娜 ^{[3
]}

田雪雁 ^{[1
,2
]}

徐叙瑢 ^{[1
,2
]}

机构：

[1] Institute of Optoelectronics Technology,Beijing Jiaotong University

[2] Key Laboratory of Luminescence and Optical Information(Beijing Jiaotong University),Ministry of Education

[3] School of Sciences,Beijing Jiaotong University

来源：

Chinese Physics B | 2009年 / 09期

关键词：

organic thin-film transistor; ultra-thin hole-blocking layer; double-conductible channels;

D O I：

暂无

中图分类号：

TN321.5 [];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

The properties of top-contact organic thin-film transistors(TC-OTFTs) using ultra-thin 2,9-dimethyl-4,7diphenyl-1,10-phenanthroline(BCP) as a hole-blocking interlayer have been improved significantly and a BCP interlayer was inserted into the middle of the pentacene active layer.This paper obtains a fire-new transport mode of an OTFT device with double-conductible channels.The accumulation and transfer of the hole carriers are limited by the BCP interlayer in the vertical region of the channel.A huge amount of carriers is located not only at the interface between pentacene and the gate insulator,but also at the two interfaces of pentacene/BCP interlayer and pentacene/gate insulator,respectively.The results suggest that the BCP interlayer may be useful to adjust the hole accumulation and transfer,and can increase the hole mobility and output current of OTFTs.The TC-OTFTs with a BCP interlayer at VDS = 20 V showed excellent hole mobility μFE and threshold voltage VTH of 0.58 cm2/(V.s) and-4.6 V,respectively.

引用

页码：3990 / 3994

页数：5