A 2.7 kV 4H-SiC JBS Diode

被引:0
|
作者
HUANG Run-hua
LI Rui
CHEN Gang
LI Yun
机构
[1] ThethResearchInstituteofChinaElectronicsTechnologyGroupCorporation
关键词
4H silicon carbide; junction barrier Schottky diode; edge termination; floating guard rings;
D O I
暂无
中图分类号
TN304 [材料];
学科分类号
摘要
<正>4H silicon carbide(4H-SiC) junction barrier Schottky(JBS) diode with breakdown voltage higher than 2.7 kV and active area of 2.8 mm2 has been successfully fabricated.The design,the fabrication,and the electrical characteristics are reported.Numerical simulations have been performed to select the doping level and thickness of the drift layer and the effectiveness of the edge termination technique.The epilayer properties of the N-type are 18μm with a doping of 3.5×1015 cm-3.The diodes are fabricated with a floating guard rings edge termination.The on-state voltage is 2.15 V at J_f=350 A·cm-2.
引用
收藏
页码:72 / 73
页数:2
相关论文
共 2 条
  • [1] Schottky versus bipolar 3.3 kV SiC diodes[J] . A Pérez-Tomás,P Brosselard,J Hassan,X Jordà,P Godignon,M Placidi,A Constant,J Millán,J P Bergman.Semiconductor Science and Technology . 2008 (12)
  • [2] TCAD Simulation Tool by SILVACO Inc,ver E .2 ATLAS. . 2011