ferroelectric thin film;
domain;
polarization retention;
scanning force microscope (SFM);
D O I:
暂无
中图分类号:
TB383.2 [];
学科分类号:
摘要:
The highly oriented perovskite-phase PT/PZT/PT ferroelectric thin film was pre- pared by sol-gel method. The domain structures and polarization retention proper- ties were investigated by scanning force microscopy. The amplitude and phase images of piezoresponse show complex various contrasts of dark, bright and gray. The complex variation of contrast in piezoresponse images results from the per- plexing orientation of grains and arrangement of domains in the ferroelectric films. The bright and dark areas in phase images correspond to top-to-bottom and bot- tom-to-top polarization oriented c-domain, respectively. The gray areas are c-domains with the polarization vector deviating from the direction normal to the film plane. The surface potential images of EFM are bright contrast, which is due to positive charges trapped on the film surface after being polarized by positive volt- age. And the brighter contrast is obtained from the higher electric field. The time-dependent surface potential images and line potential profiles show that the potential decays with time. And the decay in the region polarized by higher electric field is faster, especially at 15 min. This indicates that the polarization retention is related to the polarized electric field. Better retention properties may be obtained from a proper polarized electric field.
机构:
Samsung Elect Co Ltd, Semicond R&D Ctr, Yongin 449900, Kyungki, South KoreaSamsung Elect Co Ltd, Semicond R&D Ctr, Yongin 449900, Kyungki, South Korea
Oh, S
Park, HB
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机构:
Samsung Elect Co Ltd, Semicond R&D Ctr, Yongin 449900, Kyungki, South KoreaSamsung Elect Co Ltd, Semicond R&D Ctr, Yongin 449900, Kyungki, South Korea
Park, HB
Joo, SH
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机构:
Samsung Elect Co Ltd, Semicond R&D Ctr, Yongin 449900, Kyungki, South KoreaSamsung Elect Co Ltd, Semicond R&D Ctr, Yongin 449900, Kyungki, South Korea
Joo, SH
Oh, SJ
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机构:
Samsung Elect Co Ltd, Semicond R&D Ctr, Yongin 449900, Kyungki, South KoreaSamsung Elect Co Ltd, Semicond R&D Ctr, Yongin 449900, Kyungki, South Korea
Oh, SJ
Yoo, MH
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h-index: 0
机构:
Samsung Elect Co Ltd, Semicond R&D Ctr, Yongin 449900, Kyungki, South KoreaSamsung Elect Co Ltd, Semicond R&D Ctr, Yongin 449900, Kyungki, South Korea
Yoo, MH
Kim, BH
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机构:
Samsung Elect Co Ltd, Semicond R&D Ctr, Yongin 449900, Kyungki, South KoreaSamsung Elect Co Ltd, Semicond R&D Ctr, Yongin 449900, Kyungki, South Korea
Kim, BH
Lee, JH
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机构:
Samsung Elect Co Ltd, Semicond R&D Ctr, Yongin 449900, Kyungki, South KoreaSamsung Elect Co Ltd, Semicond R&D Ctr, Yongin 449900, Kyungki, South Korea
Lee, JH
Yoo, CY
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机构:
Samsung Elect Co Ltd, Semicond R&D Ctr, Yongin 449900, Kyungki, South KoreaSamsung Elect Co Ltd, Semicond R&D Ctr, Yongin 449900, Kyungki, South Korea
Yoo, CY
Lee, SI
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h-index: 0
机构:
Samsung Elect Co Ltd, Semicond R&D Ctr, Yongin 449900, Kyungki, South KoreaSamsung Elect Co Ltd, Semicond R&D Ctr, Yongin 449900, Kyungki, South Korea
Lee, SI
Lee, MY
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h-index: 0
机构:
Samsung Elect Co Ltd, Semicond R&D Ctr, Yongin 449900, Kyungki, South KoreaSamsung Elect Co Ltd, Semicond R&D Ctr, Yongin 449900, Kyungki, South Korea