Spatially Bandgap-Graded Mo S(2(1-x))Se2x Homojunctions for Self-Powered Visible–Near-Infrared Phototransistors

被引:9
作者
Hao Xu [1 ]
Juntong Zhu [2 ]
Guifu Zou [2 ]
Wei Liu [1 ,3 ]
Xiao Li [1 ]
Caihong Li [4 ]
Gyeong Hee Ryu [5 ]
Wenshuo Xu [5 ]
Xiaoyu Han [6 ]
Zhengxiao Guo [6 ,7 ,8 ]
Jamie H.Warner [5 ]
Jiang Wu [1 ,4 ]
Huiyun Liu [1 ]
机构
[1] Department of Electronic and Electrical Engineering, University College London
[2] School of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University
[3] London Centre for Nanotechnology, University College London
[4] Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China
[5] Department of Materials, University of Oxford
[6] Department of Chemistry, University College London
[7] Department of Chemistry, The University of Hong Kong
[8] Zhejiang Institute of Research and Innovation, The University of Hong Kong
基金
英国工程与自然科学研究理事会; 中国国家自然科学基金;
关键词
Transition metal dichalcogenides; Graded bandgaps; Homojunctions; Phototransistors; Self-powered;
D O I
暂无
中图分类号
O614.612 [];
学科分类号
070301 ; 081704 ;
摘要
Ternary transition metal dichalcogenide alloys with spatially graded bandgaps are an emerging class of two-dimensional materials with unique features, which opens up new potential for device applications. Here, visible–near-infrared and self-powered phototransistors based on spatially bandgap-graded MoS(2(1-x))Se2xalloys, synthesized by a simple and controllable chemical solution deposition method, are reported. The graded bandgaps, arising from the spatial grading of Se composition and thickness within a single domain, are tuned from 1.83 to 1.73 e V, leading to the formation of a homojunction with a builtin electric field. Consequently, a strong and sensitive gate-modulatedphotovoltaic e ect is demonstrated, enabling the homojunction phototransistors at zero bias to deliver a photoresponsivity of 311 m A W-1, a specific detectivity up to ~ 1011Jones, and an on/o ratio up to ~ 104. Remarkably, when illuminated by the lights ranging from 405 to 808 nm, the biased devices yield a champion photoresponsivity of 191.5 A W-1, a specific detectivity up to ~ 1012Jones, a photoconductive gain of 106–107, and a photoresponsive time in the order of ~ 50 ms. These results provide a simple and competitive solution to the bandgap engineering of two-dimensional materials for device applications without the need for p–n junctions.
引用
收藏
页码:189 / 202
页数:14
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