Effect of a high temperature AlN buffer layer grown by initially alternating supply of ammonia on AlGaN/GaN heterostuctures

被引：1

作者：

段焕涛 ^{[1
]}

郝跃 ^{[1
]}

张进成 ^{[1
]}

机构：

[1] Key Laboratory of Fundamental Science for National Defense on Wide Band-Gap Semiconductor Technology,School of Microelectronics,Xidian University

来源：

半导体学报 | 2009年 / 30卷 / 09期

基金：

中国国家自然科学基金;

关键词：

metal-organic vaporphase epitaxy; aluminum nitride; gallium nitride; AlGaN/GaN heterostructures;

D O I：

暂无

中图分类号：

TN304 [材料];

学科分类号：

摘要：

The effect of a high temperature AlN buffer layer grown by the initially alternating supply of ammonia (IASA) method on AlGaN/GaN heterostructures was studied.The use of AlN by the IASA method can effec-tively increase the crystalline quality and surface morphology of GaN.The mobility and concentration of 2DEG of AlGaN/GaN heterostuctures was also ameliorated.

引用

页码：1 / 4

页数：4

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