Effect of a high temperature AlN buffer layer grown by initially alternating supply of ammonia on AlGaN/GaN heterostuctures

被引：1
|
作者：
段焕涛 [1 ]
郝跃 [1 ]
张进成 [1 ]
机构：
[1] Key Laboratory of Fundamental Science for National Defense on Wide Band-Gap Semiconductor Technology,School of Microelectronics,Xidian University
来源：
半导体学报 | 2009年 / 30卷 / 09期
基金：
中国国家自然科学基金;
关键词：
metal-organic vaporphase epitaxy; aluminum nitride; gallium nitride; AlGaN/GaN heterostructures;
D O I：
暂无
中图分类号：
TN304 [材料];
学科分类号：
摘要：
The effect of a high temperature AlN buffer layer grown by the initially alternating supply of ammonia (IASA) method on AlGaN/GaN heterostructures was studied.The use of AlN by the IASA method can effec-tively increase the crystalline quality and surface morphology of GaN.The mobility and concentration of 2DEG of AlGaN/GaN heterostuctures was also ameliorated.
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收藏
页码：1 / 4
页数：4
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