Resistive random access memory and its applications in storage and nonvolatile logic

被引：0

作者：

Dongbin Zhu

Yi Li

Wensheng Shen

Zheng Zhou

Lifeng Liu

Xing Zhang

机构：

[1] InstituteofMicroelectronics,PekingUniversity

来源：

Journal of Semiconductors | 2017年 / 07期

关键词：

RRAM; memory; nonvolatile logic; metal–oxide; resistive switching;

D O I：

暂无

中图分类号：

TP333 [存贮器];

学科分类号：

081201 ;

摘要：

The resistive random access memory(RRAM) device has been widely studied due to its excellent memory characteristics and great application potential in different fields. In this paper, resistive switching materials,switching mechanism, and memory characteristics of RRAM are discussed. Recent research progress of RRAM in high-density storage and nonvolatile logic application are addressed. Technological trends are also discussed.

引用

页码：22 / 34

页数：13

共 18 条

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