Diffusion barrier performance of nanoscale TaNx thin-film

被引：0

作者：

周继承

陈海波

李幼真

机构：

[1] Changsha 410083 China

[2] School of Physics Science and Technology Central South University

[3] School of Physics Science and Technology Central South University

来源：

TransactionsofNonferrousMetalsSocietyofChina | 2007年 / 04期

基金：

中国国家自然科学基金;

关键词：

reactive magnetron sputtering; TaNx nanoscale thin-film; Cu diffusion barrier; diffusion barrier property;

D O I：

暂无

中图分类号：

TB383.2 [];

学科分类号：

070205 ; 080501 ; 1406 ;

摘要：

TaNx nanoscale thin-films and Cu/TaNx multilayer structures were deposited on P-type Si(100) substrates by DC reactive magnetron sputtering. The characteristics of TaNx films and thermal stabilities of Cu/TaNx/Si systems annealed at various temperatures were studied by four-point probe(FPP) sheet resistance measurement, atomic force microscopy(AFM), scanning electron microscope-energy dispersive spectrum (SEM-EDS), Alpha-Step IQ Profilers and X-ray diffraction(XRD), respectively. The results show that the surfaces of deposited TaNx thin-films are smooth. With the increasing of N2 partial pressure, the deposition rate and root-mean-square(RMS) decrease, while the content of N and sheet resistance of the TaNx thin-films increase, and the diffusion barrier properties of TaNx thin-films is improved. TaN1.09 can prevent interdiffusion between Cu and Si effectively after annealing up to 650 ℃ for 60 s. The failure of TaNx is mainly attributed to the formation of Cu3Si on TaN/Si interface, which results from Cu diffusion along the grain boundaries of polycrystalline TaN.

引用

页码：733 / 738

页数：6