Study of High Capacitance Ratios CPW MEMS Shunt Switches

被引:0
|
作者
Jianhai Sun Dafu Cui State Key Labof Transducer TechInstitute of ElectronicsChinese Academy of SciencesBeijing China [100080 ]
机构
关键词
capacitive shunt switch; capacitance ratio; isolation; insertion loss;
D O I
暂无
中图分类号
TH703 [结构];
学科分类号
摘要
<正>This paper describes a fixed-fixed beam ohmic switch in series with a fixed capacitor as a replacement for a capacitive switch.In this switch,a metal plate deposited on the dielectric ensures perfectly contact with the dielectric layer in the down state.The area size of the metal plate directly influences the capacitance ratio of the switch,as the area size of the metal cap decreases,the capacitance ratio dramatically rises up.The down/up capacitance ratio can exceed 800 times over the conventional designs using the same materials and the equal size.Measurement results show that high capacitance ratio of the switches has a large effect on the isolation,and can actually improve the performance of the switches.
引用
收藏
页码:548 / 549
页数:2
相关论文
empty
未找到相关数据