Purcell effect of GaAs quantum dots by photonic crystal microcavities

被引：0
|
作者：
Kazuaki Sakoda [1 ,2 ]
Takashi Kuroda [1 ]
NaokiI keda [1 ]
Takaaki Mano [1 ]
Yoshimasa Sugimoto [1 ]
Tetsuyuki Ochiai [1 ]
Keiji Kuroda [1 ]
Shunsuke Ohkouchi [3 ]
Nobuyuki Koguchi [1 ]
Kiyoshi Asakawa [1 ]
机构：
[1] National Institute for Materials Science
[2] Japan Graduate School of Pure and Applied Sciences,University of Tsukuba
[3] NEC Corporation
来源：
Chinese Optics Letters | 2009年 / 7卷 / 10期
关键词：
GaAs; Purcell effect of GaAs quantum dots by photonic crystal microcavities; QDs;
D O I：
暂无
中图分类号：
O472.3 [];
学科分类号：
070205 ; 080501 ; 0809 ; 080903 ;
摘要：
We fabricate photonic crystal slab microcavities embedded with GaAs quantum dots by electron beamlithography and droplet epitaxy.The Purcell effect of exciton emission of the quantum dots is confirmedby the micro photoluminescence measurement.The resonance wavelengths,widths,and polarization areconsistent with numerical simulation results.
引用
收藏
页码：879 / 881
页数：3
相关论文
共 50 条
  • [1] The effect of In(Ga)As/GaAs quantum dots on the optical loss of photonic crystal cavities
    Lodde, Matteo
    van Veldhoven, Rene P. J.
    Verhagen, Ewold
    Fiore, Andrea
    JOURNAL OF APPLIED PHYSICS, 2024, 135 (06)
  • [2] Effect of rapid thermal annealing on the luminescence of self-assembled In As quantum dots embedded in GaAs-based photonic crystal nanocavities
    Peng, Y. S.
    Xu, B.
    Ye, X. L.
    Jin, P.
    Wang, Z. G.
    MICROELECTRONIC ENGINEERING, 2012, 93 : 1 - 4
  • [3] Photomagnetic effect in In(Ga)As/GaAs heteronanostructures with quantum dots and wells
    Karpovich I.A.
    Khapugin O.E.
    Bulletin of the Russian Academy of Sciences: Physics, 2009, 73 (01) : 111 - 114
  • [4] Atomic force microscopy of InAs quantum dots on the vicinal surface of a GaAs crystal
    V. P. Evtikhiev
    O. V. Konstantinov
    E. Yu. Kotel’nikov
    A. V. Matveentsev
    A. N. Titkov
    A. S. Shkol’nik
    Technical Physics Letters, 2002, 28 : 139 - 141
  • [5] Atomic force microscopy of InAs quantum dots on the vicinal surface of a GaAs crystal
    Evtikhiev, VP
    Konstantinov, OV
    Kotel'nikov, EY
    Matveentsev, AV
    Titkov, AN
    Shkol'nik, AS
    TECHNICAL PHYSICS LETTERS, 2002, 28 (02) : 139 - 141
  • [6] Talbot effect in InAs/GaAs coupled cylindrical quantum dots ensemble
    Mantashyan, Paytsar
    Mantashian, Grigor
    Hayrapetyan, David
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2023, 148
  • [7] Effect of B atoms on the properties of InAs quantum dots in the GaAs matrix
    V. M. Danil’tsev
    N. V. Vostokov
    Yu. N. Drozdov
    M. N. Drozdov
    A. V. Murel’
    D. A. Pryakhin
    O. I. Khrykin
    V. I. Shashkin
    Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2008, 2 : 514 - 517
  • [8] Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots
    Hospodkova, Alice
    Pangrac, Jiri
    Zikova, Marketa
    Oswald, Jiri
    Vyskocil, Jan
    Komninou, Philomela
    Kioseoglou, Joseph
    Florini, Nikoleta
    Hulicius, Eduard
    APPLIED SURFACE SCIENCE, 2014, 301 : 173 - 177
  • [9] Photoluminescence studies of GaAs quantum dots and quantum rings
    Nemcsics, Akos
    Balazs, Janos
    Podor, Balint
    Makai, Janos
    Stemmann, Andrea
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 9, 2011, 8 (09): : 2826 - 2829
  • [10] Strain compensation technique in self-assembled InAs/GaAs quantum dots for applications to photonic devices
    Tatebayashi, J.
    Nuntawong, N.
    Wong, P. S.
    Xin, Y-C
    Lester, L. F.
    Huffaker, D. L.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (07)
12345