An InGaAs/InP 40 GHz CML static frequency divider

被引：6

作者：

苏永波 ^{[1
]}

金智 ^{[1
]}

程伟 ^{[1
]}

葛霁 ^{[1
]}

王显泰 ^{[1
]}

陈高鹏 ^{[1
]}

刘新宇 ^{[1
]}

徐安怀 ^{[2
]}

齐鸣 ^{[2
]}

机构：

[1] Institute of Microelectronics,Chinese Academy of Sciences

[2] Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences

来源：

半导体学报 | 2011年 / 32卷 / 03期

关键词：

InP; DHBT; static frequency divider;

D O I：

暂无

中图分类号：

TN772 [分频器];

学科分类号：

080902 ;

摘要：

<正>Static frequency dividers are widely used as a circuit performance benchmark or figure-of-merit indicator to gauge a particular device technology’s ability to implement high speed digital and integrated high performance mixed-signal circuits.We report a 2:1 static frequency divider in InGaAs/InP heterojunction bipolar transistor technology.This is the first InP based digital integrated circuit ever reported on the mainland of China. The divider is implemented in differential current mode logic(CML) with 30 transistors.The circuit operated at a peak clock frequency of 40 GHz and dissipated 650 mW from a single -5 V supply.

引用

页码：127 / 130

页数：4

共 4 条

[1] A symbolically defined InP double heterojunction bipolar transistor large-signal model [J].

曹玉雄 ;

金智 ;

葛霁 ;

苏永波 ;

刘新宇 .

半导体学报, 2009, 30 (12) :37-41

[2] 一种InP双异质结双极晶体管小信号物理模型及其提取方法 [J].

葛霁 ;

金智 ;

苏永波 ;

程伟 ;

刘新宇 ;

吴德馨 .

物理学报, 2009, 58 (12) :8584-8590

[3] A Physics-Based Charge-Control Model for InP DHBT Including Current-Blocking Effect [J].

Ge Ji ;

Jin Zhi ;

Su Yong-Bo ;

Cheng Wei ;

Wang Xian-Tai ;

Chen Gao-Peng ;

Liu Xin-Yu .

CHINESE PHYSICS LETTERS, 2009, 26 (07)

[4]

InGaAs-InP Mesa DHBTs with si multaneously highfTandfmaxand low Ccb/Ic ratio .2 Griffith Z,Dahlstr m M,Urteaga M,et al. IEEE Electron. Device Lett . 2004

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