Broadband Power Amplifiers for Unified Base Stations

被引:0
作者
Pengcheng Jia(ZTE USA)
机构
关键词
broadband power amplifier; GaN; LDMOS;
D O I
暂无
中图分类号
TN722.75 [];
学科分类号
080902 ;
摘要
A broadband power amplifier is required to cover the full range of cellular frequency band—from 700 MHz to 2600 MHz—in a base station that supports multiple frequency bands simultaneously. Conventional laterally diffused metal oxide semiconductor (LDMOS) transistors support narrow band applications up to 3 GHz. However, they cannot operate beyond 1 GHz in broadband applications. GaN transistors have much higher power density and operational frequency compared with LDMOS. Therefore, they are ideal for broadband amplifiers that support multiple bands. Theories for designing broadband amplifiers are introduced in this article, and a 500-2500 MHz 60 W GaN amplifier is discussed.
引用
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页码:8 / 11
页数:4
相关论文
共 3 条
[1]  
Steve C Cripps.Advanced Techniques in RF Power Amplifier Design. . 2002
[2]  
Cripps Steve C.RF Power Amplifiers for Wireless Communications. . 1999
[3]  
Pozar D M.Microwave engineering. . 2004