Leakage behavior and distortion of the hysteresis loop in ferroelectric thin films

被引:0
|
作者
郑立荣
林成鲁
许华平
邹世昌
Masanori Okuyama
机构
[1] Japan
[2] China
[3] Chinese Academy of Sciences
[4] Department of Electrical Engineering
[5] Osaka University
[6] Shanghai 200050
[7] Shanghai Institute of Metallurgy
[8] Osaka 560
[9] Faculty of Engineering Sciences
关键词
ferroelectric thin film; Schottky barrier; leakage; hysteresis loop;
D O I
暂无
中图分类号
O484 [薄膜物理学];
学科分类号
080501 ; 1406 ;
摘要
Leakage behavior and distortion of the polarization hysteresis loop in ferroelectric thin films are analyzed by applying a totally depleted asymmetric back-to-back Schottky model, with the Pt/Pb(Zr, Ti)O3/Pt ( Pt/ PZT/Pt) sandwich structural thin film capacitor as an example. Some interesting phenomena resulting from the asymmetric interfaces, such as the leakage current level, the flat-band voltage, the disclosure of the hysteresis loop, and the change in the remanent polarization and coercive field, as well as the vertical drift of the polarization hysteresis loop, are discussed in detail. The calculated results are also verified with experiments.
引用
收藏
页码:126 / 134
页数:9
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