Light-extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes using two-step roughening methods

被引：0

作者：

安铁雷 ^{[1
]}

孙波 ^{[1
]}

魏同波 ^{[1
]}

赵丽霞 ^{[1
]}

段瑞飞 ^{[1
]}

廖元勋 ^{[2
]}

李晋闽 ^{[1
]}

伊福廷 ^{[2
]}

机构：

[1] Institute of Semiconductors, Chinese Academy of Sciences

[2] Institute of High Energy Physics, Chinese Academy of Sciences

来源：

Journal of Semiconductors | 2013年 / 11期

基金：

中国国家自然科学基金;

关键词：

freestanding GaN; flip chip; LED; CsCl; wet etching; light extraction;

D O I：

暂无

中图分类号：

TN312.8 [];

学科分类号：

0803 ;

摘要：

The light extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes(FSFCLEDs)using two-step roughening methods is investigated.The output power of LEDs fabricated by using one-step and two-step roughening methods are compared.The results indicate that two-step roughening methods show more potential for light extraction.Compared with flat FS-FCLEDs,the output power of FS-FCLEDs with a nanotextured hemisphere surface shows an enhancement of 90.7%.

引用

页码：53 / 56

页数：4

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