Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes

被引：0

作者：

乔良 ^{[1
,2
]}

马紫光 ^{[2
]}

陈弘 ^{[2
]}

吴海燕 ^{[2
]}

陈雪芳 ^{[1
,2
]}

杨浩军 ^{[2
]}

赵斌 ^{[2
]}

何苗 ^{[1
,3
]}

郑树文 ^{[1
]}

李述体 ^{[1
]}

机构：

[1] Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University

[2] Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of Physics,Chinese Academy of Sciences

[3] College of Physics and Optoelectric Engineering, Guangdong University of Technology

来源：

Chinese Physics B | 2016年 / 10期

基金：

高等学校博士学科点专项科研基金; 中国国家自然科学基金;

关键词：

TMIn-treatment; InGaN/GaN quantum well; green LED;

D O I：

暂无

中图分类号：

O471.1 [半导体量子理论]; TN312.8 [];

学科分类号：

070205 ; 0803 ; 080501 ; 0809 ; 080903 ;

摘要：

In this study, the influence of multiple interruptions with trimethylindium(TMIn)-treatment in InGaN/GaN multiple quantum wells(MQWs) on green light-emitting diode(LED) is investigated. A comparison of conventional LEDs with the one fabricated with our method shows that the latter has better optical properties. Photoluminescence(PL) full-width at half maximum(FWHM) is reduced, light output power is much higher and the blue shift of electroluminescence(EL) dominant wavelength becomes smaller with current increasing. These improvements should be attributed to the reduced interface roughness of MQW and more uniformity of indium distribution in MQWs by the interruptions with TMIn-treatment.

引用

页码：442 / 445

页数：4

共 37 条

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