A theoretical model of the femtosecond laser ablation of semiconductors considering inverse bremsstrahlung absorption

被引：0

作者：

林晓辉 ^{[1
]}

张赤斌 ^{[1
]}

任维松 ^{[1
]}

蒋书运 ^{[1
]}

欧阳全会 ^{[2
]}

机构：

[1] School of Mechanical Engineering,Southeast University,Nanjing ,China

[2] Wuhan Technical College of Communication,Wuhan ,China

来源：

半导体学报 | 2012年 / 33卷 / 04期

关键词：

femtosecond laser; nonequilibrium distribution; inverse bremsstrahlung absorption; ablation mechanism;

D O I：

暂无

中图分类号：

TN248.4 [半导体激光器];

学科分类号：

0803 ; 080401 ; 080901 ;

摘要：

<正>The mechanism of the femtosecond laser ablation of semiconductors is investigated.The collision process of free electrons in a conduction band is depicted by the test particle method,and a theoretical model of nonequilibrium electron transport on the femtosecond timescale is proposed based on the Fokker-Planck equation. This model considers the impact of inverse bremsstrahlung on the laser absorption coefficient,and gives the expressions of electron drift and diffusion coefficients in the presence of screened Coulomb potential.Numerical simulations are conducted to obtain the nonequilibrium distribution function of the electrons.The femtosecond laser ablation thresholds are then calculated accordingly,and the results are in good agreement with the experimental results.This is followed by a discussion on the impact of laser parameters on the ablation of semiconductors.

引用

页码：144 / 148

页数：5