A Facile Photo-cross-linking Method for Polymer Gate Dielectrics and Their Applications in Fully Solution Processed Low Voltage Organic Field-effect Transistors on Plastic Substrate

A simple and effective photochemical method was developed for cross-linking of polymer gate dielectrics.Laborious synthetic processes for functionalizing polymer dielectrics with photo-cross-linkable groups were avoided.The photo-cross-linker,BBP-4,was added into host polymers by simple solution blending process,which was capable of abstracting hydrogen atoms from polymers containing active C―H groups upon exposure to ultraviolet(UV) radiation.The cross-linking can be completed with a relatively long wavelength UV light(365 nm).The approach has been applied to methacrylate and styrenic polymers such as commercial poly(methylmethacrylate)(PMMA),poly(iso-butylmethacrylate)(Pi BMA) and poly(4-methylstyrene)(PMS).The cross-linked networks enhanced dielectric properties and solvent resistance of the thin films.The bottom-gate organic field-effect transistors(OFETs) through all solution processes on plastic substrate were fabricated.The OFET devices showed low voltage operation and steep subthreshold swing at relatively small gate dielectric capacitance.