Interface dipole induced by asymmetric exchange effect in Mott-insulator/Mott-insulator heterojunction

被引:0
作者
郝雷 [1 ]
汪军 [2 ]
机构
[1] National Laboratory of Solid State Microstructures and Department of Physics,Nanjing University
[2] Department of Physics, Southeast University
基金
中国国家自然科学基金;
关键词
Mott insulator heterojunction; interface dipole; asymmetric exchange;
D O I
暂无
中图分类号
O481 [固体理论];
学科分类号
070205 ; 0805 ; 080502 ; 0809 ;
摘要
We study theoretically the interfacial electronic property of a heterojunction made from two Mott insulators (MI) with different magnetic structures. By means of unrestricted Hartree-Fock calculations in real space, we find that a charge dipole can form spontaneously near the interface of the MI/MI heterojunction. The magnitude of this charge dipole depends strongly on the magnetic states of both sides of the heterojunction. Combining with the result from an exactly solvable two-site toy model, we argue that the interface dipole arises from exchange effects as well as its asymmetry intrinsic to the heterojunction near the interface. Our study may shed light on the fabrication of ultrathin ferroelectric and magnetoelectric devices.
引用
收藏
页码:4305 / 4311
页数:7
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