Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content

被引：0

作者：

赵璧君 ^{[1
]}

陈鑫 ^{[1
]}

任志伟 ^{[1
]}

童金辉 ^{[1
]}

王幸福 ^{[1
]}

李丹伟 ^{[1
]}

卓祥景 ^{[1
]}

章俊 ^{[1
]}

易翰翔 ^{[1
]}

李述体 ^{[1
]}

机构：

[1] Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University

来源：

Chinese Physics B | 2013年 / 22卷 / 08期

基金：

中国国家自然科学基金;

关键词：

metal–organic chemical vapor deposition; GaN-based solar cells; InGaN/GaN multiple quantum wells;

D O I：

暂无

中图分类号：

TN304 [材料]; TM914.4 [太阳能电池];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

The performance of a multiple quantum well (MQW) InGaN solar cell with double indium content is investigated. It is found that the adoption of a double indium structure can effectively broaden the spectral response of the external quantum efficiencies and optimize the overall performance of the solar cell. Under AM1.5G illumination, the short-circuit current density (J sc ) and conversion efficiency of the solar cell are enhanced by 65% and 13% compared with those of a normal single-indium-content MQW solar cell. These improvements are mainly attributed to the expansion of the absorption spectrum and better extraction efficiency of the photon-generated carriers induced by higher polarization.

引用

页码：702 / 705

页数：4

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