High Q,high frequency,high overtone bulk acoustic resonator with ZnO films

被引：0

作者：

Meng-wei LIU ^{[1
]}

Ming-bo ZHU ^{[1
]}

Jun-hong LI ^{[1
]}

Cheng-hao WANG ^{[1
]}

机构：

[1] State Key Laboratory of Acoustics,Institute of Acoustics,Chinese Academy of Sciences

来源：

Frontiers of Information Technology & Electronic Engineering | 2013年 / 04期

基金：

中国国家自然科学基金;

关键词：

Bulk acoustic wave resonator; Quality factor(Q); ZnO film; Mason’s model;

D O I：

暂无

中图分类号：

TN629.1 [空腔谐振器];

学科分类号：

080903 ;

摘要：

Bulk acoustic wave resonators with piezoelectric films have been widely explored for the small size and high quality factor(Q) at GHz.This paper describes a high overtone bulk acoustic resonator(HBAR) based on Al/ZnO/Al sandwich layers and c-axis sapphire substrate.ZnO film with high quality c-axis orientation has been obtained using DC magnetron sputtering.The fabricated HBAR presents high Q at the multiple resonances from a 0.5-4.0 GHz wide band with a total size(including the contact pads) of 0.6 mm×0.3 mm×0.4 mm.The device exhibits the best acoustic coupling at around 2.4 GHz,which agrees with the simulation results based on the one-dimensional Mason equivalent circuit model.The HBAR also demonstrates Q values of 30 000,25 000,and 6500 at 1.49,2.43,and 3.40 GHz,respectively.It is indicated that the HBAR has potential applications for the low phase noise high frequency oscillator or microwave signal source.

引用

页码：279 / 282

页数：4

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