An advanced alkaline slurry for barrier chemical mechanical planarization on patterned wafers

被引：21

作者：

王辰伟 ^{[1
]}

刘玉岭 ^{[1
]}

牛新环 ^{[1
]}

田建颖 ^{[2
]}

高宝红 ^{[1
]}

张晓强 ^{[1
]}

机构：

[1] Institute of Microelectronics,Hebei University of Technology,Tianjin ,China

[2] Market Information Department of CSPC Zhongqi Pharmaceutical Technology(Shijiazhuang) Co,Ltd,Shijiazhuang ,China

来源：

半导体学报 | 2012年 / 33卷 / 04期

关键词：

barrier CMP; alkaline barrier slurry; surface roughness; dishing;

D O I：

暂无

中图分类号：

TN305.2 [表面处理];

学科分类号：

1401 ;

摘要：

<正>We have developed an alkaline barrier slurry(named FA/O slurry) for barrier removal and evaluated its chemical mechanical planarization(CMP) performance through comparison with a commercially developed barrier slurry.The FA/O slurry consists of colloidal silica,which is a complexing and an oxidizing agent,and does not have any inhibitors.It was found that the surface roughness of copper blanket wafers polished by the FA/O slurry was lower than the commercial barrier slurry,demonstrating that it leads to a better surface quality.In addition,the dishing and electrical tests also showed that the patterned wafers have a lower dishing value and sheet resistance as compared to the commercial barrier slurry.By comparison,the FA/O slurry demonstrates good planarization performance and can be used for barrier CMP.

引用

页码：140 / 143

页数：4

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