Comparison of Poly-Si Thin Films Prepared by Conventional Furnace Annealing and Pulsed Rapid Thermal Annealing

被引：0

作者：

JIN Rui-min1

2. Key Laboratory of Material Physics of the Ministry of Education of China

机构：

来源：

Semiconductor Photonics and Technology | 2009年 / 15卷 / 02期

关键词：

PECVD; conventional furnace annealing; pulsed rapid thermal annealing;

D O I：

暂无

中图分类号：

TN304.05 [];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

Amorphous silicon films prepared by PECVD on glass substrate were crystallized by conventional furnace annealing(FA) and rapid thermal annealing(RTA),respectively. From the Raman spectra and scanning electronic microscope(SEM),it found that the thin films made by RTA had smooth and perfect structure,while the thin films annealed by FA had a higher degree of structural disorder.

引用

页码：117 / 119

页数：3